dim400dds12 - a000 dual switch igbt module replaces ds5841 - 2 ds5841 - 3 july 2014 (ln 31762 ) caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 1 / 8 www.dynexsemi.com features ? 10s short circuit withstand ? non punch through silicon ? isolated cu base with al 2 o 3 substrates ? lead free c onstruction applications ? high reliability inverters ? motor controllers the powerline range of high power modules includes half bridge, cho pper, dual, single and bi - directional switch configu rations covering voltages from 6 00v to 33 00v and currents up to 2400a. the dim 400dds 12 - a 000 is a dual switch 12 00v, n - channel enhancement mode, insulated gate bipolar transistor (igbt) module. the igbt h as a wide reverse bias safe operating area (rbsoa) plus 10s short circuit withstand. this device is optimised for traction drives and other applications requiring high thermal cycling capability. the module incorporates an electrically isolated base plat e and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety . ordering information order as: dim 400dds 12 - a000 note: when ordering, please use the complete part number key paramet ers v ces 12 00v v ce(sat) * (typ) 2. 2 v i c (max) 40 0a i c(pk) (max) 8 00a * measured at the power busbars, not the auxiliary terminals fig. 1 circuit configuration outline type code: d (see fig. 11 for further information) fig. 2 packag e 4 x m8 sc re w ing depth m ax 16 sc re w ing depth m ax 8 6 x m4 6 x o 7 7 ( c ) 1(e) 3( c ) 5 ( e ) 5 ( e ) 6 ( g ) 10 ( e ) 2( c ) 4(e) 12 ( c ) 11 ( g ) 130 0. 5 114 0.1 57 0.2 5 57 0.2 5 124 0. 25 140 0. 5 30 0.2 16 0.2 18 0.2 44 0.2 57 0.2 53 0.2 40 0.2 5 0. 2 29.2 0.5 5.25 0. 3 35 0.2 11.5 0.2 14 0.2 55.2 0. 3 11.85 0.2 38 +1.5 -0.0 28 0.5 20 0.1
dim400dds12 - a000 2 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsem i.com absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriat e safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwise symbol parameter test conditions max. units v ces collector - emitter voltage v ge = 0v 12 00 v v ges ga te - emitter voltage 20 v i c continuous collector current t case = 8 5 c 4 00 a i c(pk) peak collector current 1ms, t case = 115 c 8 00 a p max max. transistor power dissipation t case = 25 c , t j = 150 c 3470 w i 2 t diode i 2 t value v r = 0, t p = 10ms, t j = 125oc 25 ka 2 s v isol isolation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 25 00 v thermal and mechanical ratings internal insulation material: al 2 o 3 baseplate material: cu creepage distance: 20 mm clearance: 10 mm cti (c omparative tracking index): >600 symbol parameter test conditions min typ. max units r th(j - c) thermal resistance C th(j - c) thermal resistance C th(c - h) thermal resistance C j junction temperature transistor - - 150 c diode - - 125 c t stg storage temperatur e range - - 40 - 125 c screw torque mounting C C C
dim400dds12 - a000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 3 / 8 www.dynexsemi.com electrical characteristics t case = 25 c unless stated otherwise. symbol parameter test conditions min typ max units i ces collector cut - off current v ge = 0v, v ce = v ces 0.5 ma v ge = 0v, v ce = v ces , t case = 125 c 12 ma i ges gate leakage current v ge = 20v, v ce = 0v 2 a v ge(th) gate threshold voltage i c = 2 0ma, v ge = v ce 4.5 5.5 6.5 v v ce(sat) collector - e mitter saturation voltage v ge = 15v, i c = 4 00a 2. 2 2.8 v v ge = 15v, i c = 4 00a, t j = 125 c 2.6 3.2 v i f diode forward current dc 400 a i fm diode max imum forward current t p = 1ms 800 a v f diode forward voltage i f = 4 00a 2. 1 2. 4 v i f = 4 00a, t j = 125 c 2. 1 2. 4 v c ies input capacitance v ce = 25v, v ge = 0v, f = 1mhz 45 nf q g gate charge 15v 4 c c res reverse transfer capacitance v ce = 25v , v ge = 0v, f = 1mhz nf l m module inductance C per switch 20 nh r int internal transistor resistance C per switch 270 ? sc data short circuit current, i sc t j = 125c, v cc = 900v t p 10s, v ge 15v v ce (max) = v ces C l * x di/dt iec 60747 - 9 22 50 a note: * l is the circuit inductance + l m
dim400dds12 - a000 4 /8 caution: thi s device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 400a v ge = 15v v ce = 6 00v r g(on) = 3.3 ? r g(off) = 3.3 ? l s ~ 100 nh 710 n s t f fall time 70 ns e off turn - off energy loss 60 mj t d(on) turn - on delay time 190 ns t r rise time 100 ns e on turn - on energy loss 40 mj q rr diode reverse recovery charge i f = 400a v ce = 6 00v di f /dt = 47 00a/s 55 c i rr diode reverse recovery current 300 a e rec diode reverse recovery energy 17 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 400a v ge = 15v v ce = 6 00v r g(on) = 3.3 ? r g(off) = 3.3 ? l s ~ 100 nh 890 n s t f fall time 100 ns e off turn - off energy loss 60 mj t d(on) turn - on delay time 440 ns t r rise time 125 ns e on turn - on energy loss 60 mj q rr diode reverse recovery charge i f = 4 00a v ce = 6 00v di f /dt = 40 00a/s 85 c i rr diode reverse recovery current 320 a e rec diode reverse recovery energy 32 mj
dim400dds12 - a000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 5 / 8 www.dynexsemi.com fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collector current fig. 6 typical switching energy vs gate resistance
dim400dds12 - a000 6 /8 caution: thi s device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 reverse bias safe operating area fig. 9 diode reverse bias safe operating area fig. 10 transient thermal impedance
dim400dds12 - a000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 7 / 8 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 1450g module outline type code: d fig. 11 module outline d rawing 4 x m8 screwing depth max 16 screwing depth max 8 6 x m4 130 0.5 124 0.25 30 0.2 16 0.2 18 0.2 29.2 0.5 5.25 0.3 14 0.2 5 0.2 57 0.25 57 0.25 114 0.1 40 0.2 44 0.2 53 0.2 57 0.2 11.85 0.2 55.2 0.3 38 +1.5 -0.0 35 0.2 11.5 0.2 7 (c) 1(e) 3(c) 5 (e) 5 (e) 6 (g) 10 (e) 2(c) 4(e) 12 (c) 11 (g) 140 0.5 6 x ? 7
dim400dds12 - a000 8 /8 caution: thi s device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of pr oduct applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning requirements are met. should additional product information be needed please contact customer service. although we have endeavour ed to carefully compile the information in this publication it may contain inaccuracies or typographical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to cha nge without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to pr operty. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe b urning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using prot ective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with al l semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and proper ty. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target information: this is the m ost tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in pro gress. the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names u sed in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations customer service dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom dynex semiconduct or ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom fax: +44(0)1522 500550 fax: +44(0)1522 500020 tel: +44(0)1522 500500 tel: +44(0)1522 502753 / 502901 web: http://www.dynexsemi.com email: power_solutions@dynexsemi.com ? dyne x semiconductor ltd. 2005 technical documentation C not for resale.
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